? 2003 ixys all rights reserved ds99003a(05/03) symbol test conditions maximum ratings v dss t j = 25 c to 150 c 550 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 550 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c36a i dm t c = 25 c, pulse width limited by t jm 148 a i ar t c = 25 c36a e ar t c = 25 c 50mj e as 2.0 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g n-channel enhancement mode avalanche rated, low q g , high dv/dt features z ixys advanced low q g process z low gate charge and capacitances - easier to drive - faster switching z international standard packages z low r ds (on) z rated for unclamped inductive load switching (uis) rated z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 550 v v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.16 ? pulse test, t 300 s, duty cycle d 2 % to-247 ad (ixfh) g = gate d = drain s = source tab = drain hiperfet tm power mosfets q-class to-268 (d3) ( ixft) (tab) g s v dss = 550 v i d25 = 36 a r ds(on) = 0.16 ? ? ? ? ? t rr 250 ns ixfh 36n55q ixft 36n55q (tab) advanced technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 36n55q ixft 36n55q ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 , pulse test 22 33 s c iss 4500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 600 pf c rss 160 pf t d(on) 17 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 18 ns t d(off) r g = 2.0 ? (external), 54 n s t f 15 ns q g(on) 128 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 26 nc q gd 56 nc r thjc 0.25 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 36 a i sm repetitive; pulse width limited by t jm 148 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = 25a, -di/dt = 100 a/ s, v r = 100 v 1.0 c i rm 10 a to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2003 ixys all rights reserved ds99003a(05/03) ixfh 36n55q ixft 36n55q fig. 2. extended output characteristics @ 25 deg. c 0 9 18 27 36 45 54 63 72 81 03691215182124 v ds - volts i d - amperes v g s = 1 0v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 4.5 9 13 . 5 18 22.5 27 31.5 36 02468101214 v ds - volts i d - amperes v g s = 1 0v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 4.5 9 13 . 5 18 22.5 27 31.5 36 0 1234567 v ds - volts i d - amperes v g s = 1 0v 7v 5v 6v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.4 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degr ees centigr ade r d s (on) - normalize d i d = 36a i d = 1 8a v g s = 1 0v fig. 6. drain current vs. case t emperature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 3.1 0 9 18 27 36 45 54 63 72 81 i d - amperes r d s (on) - normalize d t j = 1 25 o c t j = 25 o c v g s = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 36n55q ixft 36n55q ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 fig. 11. capacitance 10 0 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - p f c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 0 20406080100120140 q g - nanocoulombs v g s - volts v d s = 275v i d = 1 8a i g = 1 0ma fig. 7. input admittance 0 9 18 27 36 45 54 63 72 3.544.555.566.5 v gs - volts i d - amperes t j = 1 20 o c 25 o c -40 o c fig. 12. maximum t ransient t hermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) fig. 8. t ransconductance 0 10 20 30 40 50 60 70 0 9 18 27 36 45 54 63 72 81 i d - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 9. source current vs. source-to-drain voltage 0 18 36 54 72 90 10 8 0.3 0.5 0.7 0.9 1.1 v sd - volts i s - amperes t j = 1 25 o c t j = 25 o c
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